BSS806N H6327 - Infineon Technologies

Documents

NAME	TYPE
Datasheets	BSS806N
PCN Packaging	Carrier Tape Update 03/Jun/2015
Online Catalog	N-Channel Logic Level Gate FETs

NAME	TYPE
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Rds On (Max) @ Id, Vgs	57 mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id	750mV @ 11µA
Gate Charge (Qg) @ Vgs	1.7nC @ 2.5V
Input Capacitance (Ciss) @ Vds	529pF @ 10V
Power - Max	500mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	PG-SOT23-3

Part Number	Description
BLM21PG221SN1D	FERRITE CHIP 220 OHM 0805
DMG3420U-7	MOSFET N-CH 20V 5.47A SOT23

Part Number	Description
BSS806N H6327	MOSFET N-CH 20V 2.3A SOT23
BSS806N H6327	MOSFET N-CH 20V 2.3A SOT23

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